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FQP30N06L Datasheet PDF

Fairchild Semiconductor FQP30N06L

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
Part No. FQP30N06L
Datasheet FQP30N06L Download
Manufacturer
Fairchild Semiconductor
Description 60V LOGIC N-Channel MOSFET
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FQP30N06L datasheet page 1 preview

DESCRIPTION

These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. November 2013

FEATURES

● 32 A, 60 V, RDS(on) = 35 mΩ (Max.) @ VGS = 10 V, ID = 16 A
● Low Gate Charge (Typ. 15 nC)
● Low Crss (Typ. 50 pF)
● 100% Avalanche Tested
● 175°C Maximum Junction Temperature Rating D GDS TO-220 G

ABSOLUTE MAXIMUM RATINGS

TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous
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