Fairchild Semiconductor FQP30N06L
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.DESCRIPTION
These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. November 2013FEATURES
● 32 A, 60 V, RDS(on) = 35 mΩ (Max.) @ VGS = 10 V, ID = 16 A● Low Gate Charge (Typ. 15 nC)
● Low Crss (Typ. 50 pF)
● 100% Avalanche Tested
● 175°C Maximum Junction Temperature Rating D GDS TO-220 G
ABSOLUTE MAXIMUM RATINGS
TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous