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FQP3P50 Datasheet 500v P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQP3P50 August 2000 QFET FQP3P50 500V P-Channel MOSFET General.

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for electronic lamp ballast based on complimentary half bridge.

Key Features

  • -2.7A, -500V, RDS(on) = 4.9Ω @VGS = -10 V Low gate charge ( typical 18 nC) Low Crss ( typical 9.5 pF) Fast switching 100% avalanche tested Improved dv/dt capability S !.
  • G! ▶ ▲.
  • G DS TO-220 FQP Series ! D Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C.

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