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FQP45N15V2 - 150V N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 45A, 150V, RDS(on) = 0.04Ω @VGS = 10 V Low gate charge ( typical 72 nC) Low Crss ( typical 135 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
  • ◀ ▲.
  • G! G DS TO-220 FQP GD S TO-220F FQPF ! S Absolute Maximum Ratings Symbol VDSS ID www. DataSheet4U. com IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Cu.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FQP45N15V2/FQPF45N15V2 QFET FQP45N15V2/FQPF45N15V2 150V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required. ® Features • • • • • • 45A, 150V, RDS(on) = 0.