FQP55N06 Datasheet 60v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQP55N06 May 2001 QFET FQP55N06 60V N-Channel MOSFET General.

Datasheet Details

Part number	FQP55N06
Manufacturer	Fairchild (now onsemi)
File Size	659.67 KB
Description	60V N-Channel MOSFET
Datasheet	FQP55N06_FairchildSemiconductor.pdf

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products.

Key Features

55A, 60V, RDS(on) = 0.020Ω @VGS = 10 V Low gate charge ( typical 35 nC) Low Crss ( typical 85 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Dra.

FQP55N06 Distributor

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