Datasheet4U Logo Datasheet4U.com

FQP6N40CF - N-Channel MOSFET

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 6A, 400V, RDS(on) = 1.1 Ω @VGS = 10 V.
  • Low gate charge ( typical 16nC).
  • Low Crss ( typical 15pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • Fast recovery body diode (typical 70ns) TM.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQP65N06 N-Channel Power MOSFET Thinki Semiconductor
FQP10N20 N-Channel 200V MOSFET VBsemi
FQP10N20C N-Channel MOSFET INCHANGE
FQP10N60 N-Channel MOSFET Oucan Semi
FQP10N65 10A N-Channel MOSFET Oucan Semi

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FQP6N40C 400V N-Channel MOSFET
FQP6N45 450V N-Channel MOSFET
FQP6N15 150V N-Channel MOSFET
FQP6N25 250V n-Channel MOSFET
FQP6N50 500V n-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET February 2006 FRFET FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features • 6A, 400V, RDS(on) = 1.1 Ω @VGS = 10 V • Low gate charge ( typical 16nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode (typical 70ns) TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.