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FQP90N10V2 - 100V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 90 A, 100V, RDS(on) = 0.01Ω @VGS = 10 V Low gate charge ( typical 147 nC) Low Crss ( typical 300 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !.
  • ◀ ▲.
  • G! G DS TO-220 FQP Series GD S TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current.

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Datasheet Details

Part number FQP90N10V2
Manufacturer Fairchild Semiconductor
File Size 921.28 KB
Description 100V N-Channel MOSFET
Datasheet download datasheet FQP90N10V2 Datasheet
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FQP90N10V2/FQPF90N10V2 QFET FQP90N10V2/FQPF90N10V2 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for DC to DC converters, sychronous rectification, and other applications lowest Rds(on) is required. ® Features • • • • • • 90 A, 100V, RDS(on) = 0.
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