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FQP9N50C - 500V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

Features

  • 9 A, 500 V, RDS(on) = 800 mΩ (Max. ) @ VGS = 10 V, ID = 4.5 A.
  • Low Gate Charge (Typ. 28 nC).
  • Low Crss (Typ. 24 pF).
  • 100% Avalanche Tested D GDS TO-220 G Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche.

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Datasheet Details

Part number FQP9N50C
Manufacturer Fairchild Semiconductor
File Size 1.38 MB
Description 500V N-Channel MOSFET
Datasheet download datasheet FQP9N50C Datasheet
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FQP9N50C — N-Channel QFET® MOSFET FQP9N50C N-Channel QFET® MOSFET 500 V, 9 A, 800 mΩ April 2014 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features • 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A • Low Gate Charge (Typ. 28 nC) • Low Crss (Typ.
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