FQP9N50C
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
Features
- 9 A, 500 V, RDS(on) = 800 mΩ (Max.) @ VGS = 10 V, ID = 4.5 A
- Low Gate Charge (Typ. 28 n C)
- Low Crss (Typ. 24 p F)
- 100% Avalanche Tested
TO-220
Absolute Maximum Ratings TC = 25o C unless otherwise noted.
Symbol
Parameter
VDSS
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current
- Pulsed
(Note 1)
VGSS
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche...
