Datasheet4U Logo Datasheet4U.com

FQP9P25 - 250V P-Channel MOSFET

Description

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • -9.4 A, -250 V, RDS(on) = 0.62 Ω (Max. )@VGS = -10 V, ID = -4.7 A.
  • Low gate charge ( typ. 29 nC).
  • Low Crss ( typ. 27 pF).
  • 100% avalanche tested S G GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Ener.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQP9N30 N-Channel MOSFET ON Semiconductor
FQP9N90C N-Channel MOSFET ON Semiconductor
FQP10N20 N-Channel 200V MOSFET VBsemi
FQP10N20C N-Channel MOSFET INCHANGE
FQP10N60 N-Channel MOSFET Oucan Semi

Other Datasheets by Fairchild (onsemi)

Part Number Description
FQP90N08 80V N-Channel MOSFET
FQP90N10V2 100V N-Channel MOSFET
FQP90N10V2 100V N-Channel MOSFET
FQP9N08 80V N-Channel MOSFET
FQP9N08L 80V LOGIC N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
FQP9P25 — P-Channel QFET® MOSFET October 2013 FQP9P25 P-Channel QFET® MOSFET -250 V, -9.4 A, 620 mΩ Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • -9.4 A, -250 V, RDS(on) = 0.62 Ω (Max.)@VGS = -10 V, ID = -4.7 A • Low gate charge ( typ. 29 nC) • Low Crss ( typ.
Published: |