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FQPF10N50CF - N-Channel MOSFET

Download the FQPF10N50CF datasheet PDF. This datasheet also covers the FQP10N50CF variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 10A, 500V, RDS(on) = 0.61 Ω @VGS = 10 V.
  • Low gate charge (typical 43 nC).
  • Low Crss (typical 16pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • Fast recovery body diode TM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FQP10N50CF_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET December 2006 FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features • 10A, 500V, RDS(on) = 0.61 Ω @VGS = 10 V • Low gate charge (typical 43 nC) • Low Crss (typical 16pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction.