FQPF10N50CF Datasheet | Fairchild Semiconductor

Features - 10A, 500V, RDS(on) = 0.61 Ω @VGS = 10 V - Low gate charge (typical 43 n C) - Low Crss (typical 16p F) - Fast switching - 100% avalanche tested - Improved dv/dt capability - Fast recovery body diode Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. G G DS TO-220 FQP Series GD S .. TO-220F FQPF Series Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current Gate-Source voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds (Note 2) (Note 1) (Note 1) (Note 3) Parameter FQP10N50CF 10 6.35 (Note 1) 500 10- 6.35- 40- ± 30 388 10 14.3 4.5 Unit V A A A V m J A m J V/ns - Pulsed 143 1.14 -55 to +150 300 48 0.38 W W/°C °C °C - Drain current limited by maximum junction...