FQPF13N50 Datasheet | Fairchild Semiconductor

FQP13N50/FQPF13N50 QFET FQP13N50/FQPF13N50 500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switch mode power supply, power factor correction, electronic lamp ballast based on half bridge. Features - - - - - - 12.5A, 500V, RDS(on) = 0.43Ω @VGS = 10 V Low gate charge ( typical 45 n C) Low Crss ( typical 25 p F) Fast switching 100% avalanche tested Improved dv/dt capability ! - ◀ ▲ - - G! G DS TO-220 FQP Series GD S TO-220F FQPF...