FQPF13N50C Datasheet | Fairchild Semiconductor

FQP13N50C / FQPF13N50C - N-Channel QFET® MOSFET FQP13N50C / FQPF13N50C N-Channel QFET® MOSFET 500 V, 13 A, 480 mΩ November 2013 Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. Features - 13 A, 500 V, RDS(on) = 480 mΩ (Max.) @...