FQPF15P12
Description
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.
Key Features
- -15 A, -120 V, RDS(on) = 0.2 Ω (Max.) @ VGS=-10 V, ID = -7.5 A
- Low Gate Charge (Typ. 29 nC)
- Low Crss (Typ. 110 pF)
- 100% Avalanche Tested
- 175°C Maximum Junction Temperature Rating S G GDS TO-220 GDS TO-220F
