Datasheet4U Logo Datasheet4U.com

FQPF17N08L - 80V LOGIC N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 11.2A, 80V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 8.8 nC) Low Crss ( typical 29 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating Low level gate drive requirements allowing direct operation from logic drives D ! " G! GD S ! " " " TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQPF10N20C N-Channel MOSFET INCHANGE
FQPF10N60 N-Channel MOSFET Oucan Semi
FQPF10N65 10A N-Channel MOSFET Oucan Semi
FQPF12N50 12A N-Channel MOSFET Oucan Semi
FQPF12N60 12A N-Channel MOSFET Oucan Semi

Other Datasheets by Fairchild (onsemi)

Part Number Description
FQPF17N08 80V N-Channel MOSFET
FQPF17N40 400V N-Channel MOSFET
FQPF17P06 60V P-Channel MOSFET
FQPF17P10 100V P-Channel MOSFET
FQPF10N20 200V N-Channel MOSFET

Full PDF Text Transcription

Click to expand full text
FQPF17N08L December 2000 QFET FQPF17N08L 80V LOGIC N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as automotive, high efficiency switching for DC/DC converters, and DC motor control. TM Features • • • • • • • • 11.2A, 80V, RDS(on) = 0.1Ω @VGS = 10 V Low gate charge ( typical 8.
Published: |