FQPF19N20 Description
Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC),...
FQPF19N20 Key Features
- 11.8 A, 200 V, RDS(on)=150 mΩ(Max.)@VGS=10 V, ID=5.9 A
- Low Gate Charge (Typ. 31 nC)
- Low Crss (Typ. 30 pF)
- 100% Avalanche Tested