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FQPF19N20 - 200V N-Channel MOSFET

Features

  • This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
  • 11.8 A, 200 V, RDS(on)=150 mΩ(Max. )@VGS=10 V, ID.

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Datasheet Details

Part number FQPF19N20
Manufacturer Fairchild Semiconductor
File Size 797.11 KB
Description 200V N-Channel MOSFET
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FQPF19N20 N-Channel MOSFET FQPF19N20 N-Channel QFET® MOSFET 200 V, 11.8 A, 150 mΩ March 2013 Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. • 11.8 A, 200 V, RDS(on)=150 mΩ(Max.)@VGS=10 V, ID=5.9 A • Low Gate Charge (Typ. 31 nC) • Low Crss (Typ.
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