FQPF2N60C Key Features
- 2 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 1 A
- Low Gate Charge (Typ. 8.5 nC)
- Low Crss (Typ. 4.3 pF)
- 100% Avalanche Tested
| Manufacturer | Part Number | Description |
|---|---|---|
HAOHAI |
FQPF2N60C | N-Channel MOSFET |
| Oucan Semi Oucan Semi |
FQPF2N60 | 2A N-Channel MOSFET |