FQPF2P40 Description
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and mutation modes. These devices are well suited for electronic lamp ballasts based on the plementary half...
FQPF2P40 Key Features
- 1.34A, -400V, RDS(on) = 6.5Ω @VGS = -10 V Low gate charge ( typical 10 nC) Low Crss ( typical 6.5 pF) Fast switching 100