FQPF4N60 Datasheet 600v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQPF4N60 April 2000 QFET FQPF4N60 600V N-Channel MOSFET General.

Datasheet Details

Part number	FQPF4N60
Manufacturer	Fairchild (now onsemi)
File Size	550.26 KB
Description	600V N-Channel MOSFET
Datasheet	FQPF4N60_FairchildSemiconductor.pdf

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switch mode power supply.

Key Features

2.6A, 600V, RDS(on) = 2.2Ω @VGS = 10 V Low gate charge ( typical 15 nC) Low Crss ( typical 8.0 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G! GD S ! " " " TO-220F FQPF Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Curr.

FQPF4N60 Distributor

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