Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.
Features
- 3.0 A, 400 V, RDS(on) = 1.6 Ω (Max. ) @ VGS = 10 V, ID = 1.5 A.
- Low Gate Charge (Typ. 10 nC).
- Low Crss (Typ. 7 pF).
- 100% Avalanche Tested
D
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current
- Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy.
FQPF5N40 Datasheet
