FQPF5N50CF
Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
- 5A, 500V, RDS(on) = 1.55 Ω @VGS = 10 V
- Low gate charge ( typical 18nC)
- Low Crss ( typical 15pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability TM
