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FQPF6N40CF Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET February 2006 FRFET FQP6N40CF/FQPF6N40CF 400V N-Channel.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology.

Key Features

  • 6A, 400V, RDS(on) = 1.1 Ω @VGS = 10 V.
  • Low gate charge ( typical 16nC).
  • Low Crss ( typical 15pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • Fast recovery body diode (typical 70ns) TM.

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