Datasheet Summary
FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET
February 2006
FRFET
FQP6N40CF/FQPF6N40CF
400V N-Channel MOSFET
Features
- 6A, 400V, RDS(on) = 1.1 Ω @VGS = 10 V
- Low gate charge ( typical 16nC)
- Low Crss ( typical 15pF)
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- Fast recovery body diode (typical 70ns)
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices...