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FQPF6N40CF - N-Channel MOSFET

Download the FQPF6N40CF datasheet PDF. This datasheet also covers the FQP6N40CF variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Key Features

  • 6A, 400V, RDS(on) = 1.1 Ω @VGS = 10 V.
  • Low gate charge ( typical 16nC).
  • Low Crss ( typical 15pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • Fast recovery body diode (typical 70ns) TM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FQP6N40CF_FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by Fairchild (now onsemi)

Part Number Description
FQPF6N40C 400V N-Channel MOSFET
FQPF6N15 150V N-Channel MOSFET
FQPF6N25 250V N-Channel MOSFET
FQPF6N50 500V N-Channel MOSFET
FQPF6N60 600V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET February 2006 FRFET FQP6N40CF/FQPF6N40CF 400V N-Channel MOSFET Features • 6A, 400V, RDS(on) = 1.1 Ω @VGS = 10 V • Low gate charge ( typical 16nC) • Low Crss ( typical 15pF) • Fast switching • 100% avalanche tested • Improved dv/dt capability • Fast recovery body diode (typical 70ns) TM Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.