FQPF6N70 Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation modes. These devices are well suited for high efficiency switch mode power supply.
FQPF6N70 Key Features
- 3.5A, 700V, RDS(on) = 1.5 Ω @ VGS = 10 V Low gate charge ( typical 30 nC) Low Crss ( typical 15 pF) Fast switching 100%