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FQPF6N80T Datasheet N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQPF6N80T — N-Channel QFET® MOSFET FQPF6N80T N-Channel QFET® MOSFET 800 V, 3.3 A, 1.

General Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength.

These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Key Features

  • 3.3 A, 800 V, RDS(on) = 1.95 Ω (Max. ) @ VGS = 10 V, ID = 1.65 A.
  • Low Gate Charge (Typ. 31 nC).
  • Low Crss (Typ. 14 pF).
  • 100% Avalanche Tested.
  • 100% Package Isolation Tested D GDS G TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Source Voltage.

More Datasheets from Fairchild (now onsemi)

Part Number Description
FQPF6N80 800V N-Channel MOSFET
FQPF6N80C 800V N-Channel MOSFET
FQPF6N80CT 800V N-Channel MOSFET
FQPF6N15 150V N-Channel MOSFET
FQPF6N25 250V N-Channel MOSFET
FQPF6N40C 400V N-Channel MOSFET
FQPF6N40CF N-Channel MOSFET
FQPF6N50 500V N-Channel MOSFET
FQPF6N60 600V N-Channel MOSFET
FQPF6N60C 600V N-Channel MOSFET

FQPF6N80T Distributor