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FQPF70N10 - 100V N-Channel MOSFET

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 35 A, 100 V, RDS(on) = 23 mΩ (Max. ) @ VGS = 10 V, ID = 17.5 A.
  • Low Gate Charge (Typ. 85 nC).
  • Low Crss (Typ. 150 pF).
  • 100% Avalanche Tested.
  • 175°C Maximum Junction Temperature Rating D GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed Gate-Sour.

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Full PDF Text Transcription

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FQPF70N10 — N-Channel QFET® MOSFET FQPF70N10 N-Channel QFET® MOSFET 100 V, 35 A, 23 mΩ Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. November 2013 Features • 35 A, 100 V, RDS(on) = 23 mΩ (Max.) @ VGS = 10 V, ID = 17.5 A • Low Gate Charge (Typ. 85 nC) • Low Crss (Typ.
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