FQPF9N50C Datasheet 500V N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQPF9N50C — N-Channel QFET® MOSFET FQPF9N50C N-Channel QFET® MOSFET 500 V, 9 A, 800 mΩ November.

FQPF9N50C 500v n-channel mosfet by Fairchild (now onsemi) - Datasheet Preview

Datasheet Details

Part number	FQPF9N50C
Manufacturer	Fairchild (now onsemi)
File Size	850.09 KB
Description	500V N-Channel MOSFET
Download	FQPF9N50C Download (PDF)

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Key Features

9 A, 500 V, RDS(on) = 800 mΩ (Max. ) @ VGS = 10 V, ID = 4.5 A.
Low Gate Charge (Typ. 28 nC).
Low Crss (Typ. 24 pF).
100% Avalanche Tested D GDS G TO-220F Absolute Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche.

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