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FQPF9P25 - 250V P-Channel MOSFET

Description

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • -6 A, -250 V, RDS(on) = 620 mΩ (Max. ) @ VGS = -10 V, ID = -3 A.
  • Low Gate Charge (Typ. 29 nC).
  • Low Crss (Typ. 27 pF).
  • 100% Avalanche Tested S G GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche C.

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Full PDF Text Transcription

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FQPF9P25 — P-Channel QFET® MOSFET FQPF9P25 P-Channel QFET® MOSFET -250 V, -6 A, 620 mΩ November 2013 Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • -6 A, -250 V, RDS(on) = 620 mΩ (Max.) @ VGS = -10 V, ID = -3 A • Low Gate Charge (Typ. 29 nC) • Low Crss (Typ. 27 pF) • 100% Avalanche Tested S G GDS TO-220F Absolute Maximum Ratings TC = 25°C unless otherwise noted.
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