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FQT5P10 - P-Channel MOSFET

Datasheet Summary

Description

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

Features

  • -1.0 A, -100 V, RDS(on)=1.05 Ω(Max. ) @VGS=-10 V, ID=-0.5 A.
  • Low Gate Charge (Typ. 6.3 nC).
  • Low Crss (Typ. 18 pF).
  • 100% Avalanche Tested D S G SOT-223 Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 70°C) Drain Current - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy (Note 2).

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Datasheet Details

Part number FQT5P10
Manufacturer Fairchild Semiconductor
File Size 788.85 KB
Description P-Channel MOSFET
Datasheet download datasheet FQT5P10 Datasheet
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FQT5P10 P-Channel MOSFET FQT5P10 P-Channel QFET® MOSFET -100 V, -1.0 A, 1.05 Ω March 2013 Description This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications. Features • -1.0 A, -100 V, RDS(on)=1.05 Ω(Max.) @VGS=-10 V, ID=-0.5 A • Low Gate Charge (Typ. 6.3 nC) • Low Crss (Typ.
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