FQU10N20C Datasheet PDF - Fairchild Semiconductor 200V N-Channel MOSFET Specs

FQU10N20C - 200V N-Channel MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

7.8 A, 200 V, RDS(on) = 360 mΩ (Max. ) @ VGS = 10 V, ID = 3.9 A.
Low Gate Charge (Typ. 20 nC).
Low Crss (Typ. 40.5 pF).
100% Avalanche Tested November 2013.

Datasheet Details

Part number	FQU10N20C
Manufacturer	Fairchild Semiconductor
File Size	560.55 KB
Description	200V N-Channel MOSFET
Datasheet	FQU10N20C Datasheet
Additional preview pages of the FQU10N20C datasheet.

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Full PDF Text Transcription

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FQD10N20C / FQU10N20C — N-Channel QFET® MOSFET FQD10N20C / FQU10N20C N-Channel QFET® MOSFET 200 V, 7.8 A, 360 mΩ Features • 7.8 A, 200 V, RDS(on) = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.9 A • Low Gate Charge (Typ. 20 nC) • Low Crss (Typ. 40.5 pF) • 100% Avalanche Tested November 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Published: Dec 27, 2014 |