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FQU2N100 - 1000V N-Channel MOSFET

Datasheet Summary

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

Features

  • 1.6 A, 1000 V, RDS(on) = 9 Ω (Max. )@ VGS = 10 V, ID = 0.8 A.
  • Low Gate Charge ( Typ. 12 nC).
  • Low Crss ( Typ. 5 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant D D G S D-PAK GDS I-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) Gate-Source Vo.

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Datasheet Details

Part number FQU2N100
Manufacturer Fairchild Semiconductor
File Size 0.97 MB
Description 1000V N-Channel MOSFET
Datasheet download datasheet FQU2N100 Datasheet
Additional preview pages of the FQU2N100 datasheet.

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Full PDF Text Transcription

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FQD2N100 / FQU2N100 — N-Channel QFET® MOSFET FQD2N100 / FQU2N100 N-Channel QFET® MOSFET 1000 V, 1.6 A, 9 Ω October 2013 Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. Features • 1.6 A, 1000 V, RDS(on) = 9 Ω (Max.)@ VGS = 10 V, ID = 0.8 A • Low Gate Charge ( Typ. 12 nC) • Low Crss ( Typ.
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