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FQU3N25 Datasheet 250v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQD3N25 / FQU3N25 November 2000 QFET FQD3N25 / FQU3N25 250V N-Channel.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switching DC/DC converters, switch mode power supply.

Key Features

  • 2.4A, 250V, RDS(on) = 2.2Ω @VGS = 10 V Low gate charge ( typical 4.0 nC) Low Crss ( typical 4.7 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) D.

More Datasheets from Fairchild (now onsemi)

Part Number Description
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FQU3N50C 500V N-Channel MOSFET
FQU3N60 600V N-Channel MOSFET
FQU30N06 60V N-Channel MOSFET
FQU30N06L 60V LOGIC N-Channel MOSFET
FQU3P20 200V P-Channel MOSFET
FQU3P50 500V P-Channel MOSFET
FQU10N20 200V N-Channel MOSFET
FQU10N20C 200V N-Channel MOSFET

FQU3N25 Distributor