FQU3N50C
Features
- 2.5 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V
- Low gate charge ( typical 10 n C )
- Low Crss ( typical 8.5 p F)
- Fast switching
- 100 % avalanche tested
- Improved dv/dt capability
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Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
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D-PAK
FQD Series
I-PAK
FQU Series
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Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Drain Current Drain Current
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
(Note...
