FQU3N50C Datasheet PDF - Fairchild Semiconductor 500V N-Channel MOSFET Specs

FQU3N50C - 500V N-Channel MOSFET

Datasheet Summary

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

2.5 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V.
Low gate charge ( typical 10 nC ).
Low Crss ( typical 8.5 pF).
Fast switching.
100 % avalanche tested.
Improved dv/dt capability ®.

Datasheet Details

Part number	FQU3N50C
Manufacturer	Fairchild Semiconductor
File Size	1.02 MB
Description	500V N-Channel MOSFET
Datasheet	FQU3N50C Datasheet
Additional preview pages of the FQU3N50C datasheet.

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Full PDF Text Transcription

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FQD3N50C/FQU3N50C 500V N-Channel MOSFET QFET FQD3N50C/FQU3N50C 500V N-Channel MOSFET Features • 2.5 A, 500 V, RDS(on) = 2.5 Ω @ VGS = 10 V • Low gate charge ( typical 10 nC ) • Low Crss ( typical 8.5 pF) • Fast switching • 100 % avalanche tested • Improved dv/dt capability ® Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Published: Sep 24, 2005 |