Datasheet4U Logo Datasheet4U.com

FQU3P50 - 500V P-Channel MOSFET

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • -2.1A, -500V, RDS(on) = 4.9Ω @VGS = -10 V.
  • Low gate charge ( typical 18 nC).
  • Low Crss ( typical 9.5 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS Compliant I-PAK FQU Series G! S !.
  • ▶▲.
  • ! D Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Conti.

📥 Download Datasheet

Datasheet preview – FQU3P50

Datasheet Details

Part number FQU3P50
Manufacturer Fairchild Semiconductor
File Size 699.74 KB
Description 500V P-Channel MOSFET
Datasheet download datasheet FQU3P50 Datasheet
Additional preview pages of the FQU3P50 datasheet.

📁 Similar Datasheet

  • FQU3N60CTU - N-Channel MOSFET (ON Semiconductor)
  • FQU10N20 - N-Channel MOSFET (INCHANGE)
  • FQU11P06 - P-Channel MOSFET (VBsemi)
  • FQU1N60 - 1.3A N-Channel MOSFET (OuCan)
  • FQU1N60C - N-Channel MOSFET (HAOHAI)
  • FQU1N60C - N-Channel MOSFET (ON Semiconductor)
  • FQU2N50B - N-Channel MOSFET (ON Semiconductor)
  • FQU2N60C - N-Channel MOSFET (ON Semiconductor)
  • FQU4N60 - 600V 4A N-Channel MOSFET (Oucan Semi)
  • FQU4N60C - 4A 600V N-Channel MOSFET (HAOHAI)
Other Datasheets by Fairchild Semiconductor

Full PDF Text Transcription

Click to expand full text
FQD3P50 / FQU3P50 FQD3P50 / FQU3P50 500V P-Channel MOSFET January 2009 QFET® General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge. D GS D-PAK FQD Series GDS Features • -2.1A, -500V, RDS(on) = 4.9Ω @VGS = -10 V • Low gate charge ( typical 18 nC) • Low Crss ( typical 9.
Published: |