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FQU3P50 Datasheet 500v P-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQD3P50 / FQU3P50 FQD3P50 / FQU3P50 500V P-Channel MOSFET January 2009 QFET®.

General Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for electronic lamp ballast based on plimentary half bridge.

Key Features

  • -2.1A, -500V, RDS(on) = 4.9Ω @VGS = -10 V.
  • Low gate charge ( typical 18 nC).
  • Low Crss ( typical 9.5 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS Compliant I-PAK FQU Series G! S !.
  • ▶▲.
  • ! D Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Conti.

More Datasheets from Fairchild (now onsemi)

Part Number Description
FQU3P20 200V P-Channel MOSFET
FQU30N06 60V N-Channel MOSFET
FQU30N06L 60V LOGIC N-Channel MOSFET
FQU3N25 250V N-Channel MOSFET
FQU3N30 300V N-Channel MOSFET
FQU3N40 400V N-Channel MOSFET
FQU3N50C 500V N-Channel MOSFET
FQU3N60 600V N-Channel MOSFET
FQU10N20 200V N-Channel MOSFET
FQU10N20C 200V N-Channel MOSFET

FQU3P50 Distributor