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FQU4N60 Datasheet 600v N-channel MOSFET

Manufacturer: Fairchild (now onsemi)

Overview: FQU4N60 600V N-Channel MOSFET FQU4N60 600V N-Channel MOSFET.

General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to Minimize on-state resistance,provide superior switching Performance, and withstand high energy pulse in the Avalanche and mutation mode.

These devices are well Suited for high efficiency switch mode power supply,power Factor correction, electronic lamp ballast on half bridge.

Key Features

  • 2.6A, 600V @TJ = 25°C.
  • Typ. RDS(on) = 1.0Ω.
  • Low gate charge (typical 12.8nC).
  • Low effective output capacitance (typ ical 32pF).
  • 100% avalanche tested.
  • Improved dv/dt capability November 2002 QFET TM.

FQU4N60 Distributor