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FQU5P10 - 100V P-Channel MOSFET

Datasheet Summary

Description

These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • -3.6A, -100V, RDS(on) = 1.05Ω @VGS = -10 V.
  • Low gate charge ( typical 6.3 nC).
  • Low Crss ( typical 18 pF).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability.
  • RoHS Compliant D D GS D-PAK FQD Series GDS I-PAK FQU Series G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - C.

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Datasheet Details

Part number FQU5P10
Manufacturer Fairchild Semiconductor
File Size 701.68 KB
Description 100V P-Channel MOSFET
Datasheet download datasheet FQU5P10 Datasheet
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FQD5P10 / FQU5P10 FQD5P10 / FQU5P10 100V P-Channel MOSFET October 2008 QFET® General Description These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC/DC converters, and DC motor control. Features • -3.6A, -100V, RDS(on) = 1.05Ω @VGS = -10 V • Low gate charge ( typical 6.
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