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FQU7N10 - 100V N-Channel MOSFET

Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Features

  • 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! " G! G S ! " " " D-PAK FQD Series I-PAK G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) D.

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Datasheet Details

Part number FQU7N10
Manufacturer Fairchild Semiconductor
File Size 544.88 KB
Description 100V N-Channel MOSFET
Datasheet download datasheet FQU7N10 Datasheet
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Full PDF Text Transcription

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FQD7N10 / FQU7N10 December 2000 QFET FQD7N10 / FQU7N10 100V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control. TM Features • • • • • • 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 5.
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