FR120N Datasheet | Fairchild Semiconductor

IRFR120, IRFU120 Data Sheet January 2002 8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs .. These are N-Channel enhancement mode silicon gate Features - 8.4A, 100V - r DS(ON) = 0.270Ω - Single Pulse Avalanche Energy Rated - SOA is Power Dissipation Limited - Nanosecond Switching Speeds - Linear Transfer Characteristics - High Input Impedance - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits. Formerly developmental type TA09594. Ordering Information PART NUMBER IRFR120 IRFU120 PACKAGE TO-252AA TO-251AA BRAND IFR120 IFU120 Symbol NOTE: When ordering, use the entire part number. Add the suffix T to obtain the TO-252AA variant in the tape and reel, i.e., IRFR120T. Packaging JEDEC TO-251AA SOURCE DRAIN GATE GATE JEDEC TO-252AA DRAIN (FLANGE) DRAIN DRAIN (FLANGE) SOURCE ©2002 Fairchild Semiconductor Corporation IRFR120, IRFU120 Rev. B IRFR120,...