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FSB660 - PNP Low Saturation Transistor

General Description

SSOT-3 parts are shipped in tape.

The carrier tape is made from a dissipative (carbon filled) polycarbonate resin.

The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent.

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Other Datasheets by Fairchild (now onsemi)

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FSB660A PNP Transistor
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FSB660/FSB660A FSB660 / FSB660A C E B SuperSOT -3 (SOT-23) TM PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 2A continuous. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted FSB660/FSB660A 60 60 5 2 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150°C. 2) These are steady state limits.