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FSFR1600XSL - Power Switch

Download the FSFR1600XSL datasheet PDF. This datasheet also covers the FSFR-XS variant, as both devices belong to the same power switch family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Low on-resistance RDS =0.026 Ω typ.
  • High speed switching.
  • 4 V gate drive device can be driven from 5 V source Outline.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FSFR-XS-FairchildSemiconductor.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
FSFR1600XSL Power Switch ON Semiconductor
FSFR1600XS Power Switch ON Semiconductor
FSFR1700XS Power Switch ON Semiconductor
FSFR1700XSL Power Switch ON Semiconductor
FSFR1800XS Power Switch ON Semiconductor

Other Datasheets by Fairchild (now onsemi)

Part Number Description
FSFR1600XS Power Switch
FSFR1600 Power Switch
FSFR1600L Power Switch
FSFR1700 Power Switch
FSFR1700L Power Switch

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
2SK2937 Silicon N Channel MOS FET High Speed Power Switching REJ03G1051-0500 (Previous: ADE-208-560C) Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1 2 3 S Rev.4.00 Sep 07, 2005 page 1 of 7 Free Datasheet http://www.Datasheet4U.com 2SK2937 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3.