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FSGL134R - Radiation Hardened / SEGR Resistant N-Channel Power MOSFET

Features

  • 10A, 150V, rDS(ON) = 0.125Ω.
  • UIS Rated.
  • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si).
  • Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 5V Off-Bias.
  • Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IAS.
  • Photo Current - 2nA Per-RAD (Si)/s Typically.
  • Neutron - M.

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Full PDF Text Transcription

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FSGL134R Data Sheet www.DataSheet4U.com July 2001 File Number 5011 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs itle bjec tho yw s () eato OCI O mar Fairchild Star*Power™ Rad Hard MOSFETs have been specifically developed for high performance applications in a commercial or military space environment. Star*Power MOSFETs offer the system designer both extremely low rDS(ON) and Gate Charge allowing the development of low loss Power Subsystems. Star*Power Gold FETs combine this electrical capability with total dose radiation hardness up to 100K RADs while maintaining the guaranteed performance for Single Event Effects (SEE) which the Fairchild FS families have always featured. TM Features • 10A, 150V, rDS(ON) = 0.
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