FSGL134R Datasheet | Fairchild Semiconductor

Features - 10A, 150V, r DS(ON) = 0.125Ω - UIS Rated - Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) - Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 82Me V/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 5V Off-Bias - Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IAS - Photo Current - 2n A Per-RAD (Si)/s Typically - Neutron - Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2 - Usable to 1E14 Neutrons/cm2 ge de e O nes OC EW mar The Fairchild family of Star- Power FETs includes a series of devices in various voltage, current and package styles. The portfolio consists of Star- Power and Star- Power Gold products. Star- Power FETs are optimized for total dose and r DS(ON) while exhibiting SEE capability at full rated voltage up to an LET of 37. Star- Power Gold FETs have been optimized for SEE and Gate Charge bining SEE performance to 80% of the rated voltage for an LET of 82 with extremely low gate charge characteristics. This MOSFET is an enhancement-mode silicon-gate power field effect transistor of the vertical DMOS (VDMOS) structure. It is specifically designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converters, power distribution, motor drives and relay drivers as well as other power control and conditioning applications. As with conventional MOSFETs these Radiation Hardened MOSFETs offer ease of voltage control, fast switching speeds and ability to parallel switching devices. Reliability screening is available as either TXV or Space equivalent of MIL-PRF-19500. Symbol Packaging TO-205AF Formerly available as type TA45228W. Ordering Information RAD LEVEL 10K 100K 100K SCREENING LEVEL Engineering samples TXV Space PART NUMBER/BRAND FSGL134D1 FSGL134R3 FSGL134R4 ©2001 Fairchild Semiconductor Corporation 4-1...