Fairchild Semiconductor G23N60UFD
SGF23N60UFD
| Part No. | G23N60UFD |
|---|---|
| Datasheet | G23N60UFD Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | SGF23N60UFD |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Fairchild's Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required.FEATURES
● High Speed Switching● Low Saturation Voltage : VCE(sat) = 2.1 V @ IC = 12A
● High Input Impedance
● CO-PAK, IGBT with FRD : trr = 42ns (typ.) Application AC & DC Motor controls, General Purpose Inverters, Robotics, Servo Controls C GC E TTOO--33PPFF
ABSOLUTE MAXIMUM RATINGS
TC = 25°C unless otherwise noted Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TLDESCRIPTION
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current @ TC = 25°C @ TC = 100°C Diode Continuous Forward Current Diode Maximum Forward Current @ TC = 100°C Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature @ TC = 25°C @ TC = 100°C Storage Temperature Range Maximum Lead Temp.
