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HGTG30N60B3
Data Sheet November 2013
600 V, NPT IGBT
The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter and power supplies.
Features
• 30 A, 600 V, TC = 110°C • Low Saturation Voltage: VCE(sat) = 1.45 V @ IC = 30 A • Typical Fall Time. . . . . . . . 90ns at TJ = 150°C • Short Circuit Rating • Low Conduction Loss
Formerly Developmental Type TA49170.
Ordering Information
PART NUMBER HGTG30N60B3 PACKAGE TO-247 BRAND G30N60B3
Packaging
JEDEC STYLE TO-247
NOTE: When ordering, use the entire part number.
G30N60B3 Datasheet
