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G30N60B3 - NPT IGBT

Key Features

  • of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HGTG30N60B3 Data Sheet November 2013 600 V, NPT IGBT The HGTG30N60B3 combines the best features of high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: UPS, solar inverter and power supplies. Features • 30 A, 600 V, TC = 110°C • Low Saturation Voltage: VCE(sat) = 1.45 V @ IC = 30 A • Typical Fall Time. . . . . . . . 90ns at TJ = 150°C • Short Circuit Rating • Low Conduction Loss Formerly Developmental Type TA49170. Ordering Information PART NUMBER HGTG30N60B3 PACKAGE TO-247 BRAND G30N60B3 Packaging JEDEC STYLE TO-247 NOTE: When ordering, use the entire part number.