G7N60A4D - HGTG7N60A4D

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Fairchild Semiconductor

Part number	G7N60A4D
Manufacturer	Fairchild Semiconductor
File Size	152.16 KB
Description	HGTG7N60A4D
Datasheet	G7N60A4D Datasheet
Additional preview pages of the G7N60A4D datasheet.

of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49331. The diode used in anti-parallel is the development type TA49370. This IGBT is ideal for many high voltage switching.

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Published: Mar 16, 2015 |