Fairchild Semiconductor G80N60UFD
The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature. for Soldering Purposes,/8” from Case for 5 Seconds @ TC = 25°C @ TC = 100°C @ TC = 100°C @ TC = 25°C @ TC = 100°C SGH80N60UFD 600 ± 20 80 40 220 25 280 195 78 -55 to +150 -55 to +150 300 Units V V A A A A A W W °C °C °C Notes : (1) Repetitive rating : Pulse width limited by max.| Part No. | G80N60UFD |
|---|---|
| Datasheet | G80N60UFD Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | SGH80N60UFD |
| Buy | Stock & Price |
GENERAL DESCRIPTION
Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses.FEATURES
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● High speed switching Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40A High input impedance CO-PAK, IGBT with FRD : trr = 50ns (typ.)
APPLICATIONS
AC & DC motor controls, general purpose inverters, robotics, and servo controls. C G TO-3P G C E E TC = 25°C unless otherwise notedABSOLUTE MAXIMUM RATINGS
Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TLDESCRIPTION
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. junction temperature Thermal Characteristics Symbol RθJC(IGBT) RθJC(DIODE) RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient Typ. ---Max.
