Fairchild Semiconductor H11AA3M
The H11AAXM series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended.FEATURES
● Bi-polar emitter input● Built-in reverse polarity input protection
● Underwriters Laboratory (UL) recognized File #E90700, Volume 2
● VDE approved File #102497 (ordering option ‘V’)
DESCRIPTION
APPLICATIONS
● AC line monitor● Unknown polarity DC sensor
● Telephone line interface Schematic Package Outlines 1 6 BASE 2 5 COLL 3 4 EMITTER ©2006 Fairchild Semiconductor Corporation H11AA1M, H11AA2M, H11AA3M, H11AA4M Rev. 1.0.3 Free Datasheet H11AA1M, H11AA2M, H11AA3M, H11AA4M — AC Input/Phototransistor Optocouplers
ABSOLUTE MAXIMUM RATINGS
(TA =25°C Unless otherwise specified) Stresses exceeding the absolute maximum ratings may damage the device. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol TOTAL DEVICE TSTG TOPR TSOL PD EMITTER IF IF(pk) PD DETECTOR IC PD Parameter Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power...