Fairchild Semiconductor H11B1M
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.FEATURES
● High Sensitivity to Low Input Drive Current● Meets or Exceeds All JEDEC Registered Specifications
● Safety and Regulatory Approvals: – UL1577, 4,170 VACRMS for 1 Minute
● DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage
DESCRIPTION
APPLICATIONS
● Low Power Logic Circuits● Telecommunications Equipment
● Portable Electronics
● Solid State Relays
● Interfacing Coupling Systems of Different Potentials and Impedances Schematic ANODE 1 CATHODE 2 N/C 3 6 BASE 5 COLLECTOR 4 EMITTER Figure 1. Schematic 6 6 1 1 6 1 Figure 2. Package Outlines ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.4 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M — 6-Pin DIP General Purpose Photodarlington Optocoupler Safety and Insulation Ratings As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. Compliance with the safety ratings shall be ensured by means of protective circuits. Parameter Installation...