H11B1M Datasheet | Fairchild Semiconductor

Features - High Sensitivity to Low Input Drive Current - Meets or Exceeds All JEDEC Registered Specifications - Safety and Regulatory Approvals: - UL1577, 4,170 VACRMS for 1 Minute - DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage Description The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington. Applications - Low Power Logic Circuits - Telemunications Equipment - Portable Electronics - Solid State Relays - Interfacing Coupling Systems of Different Potentials and Impedances Schematic ANODE 1 CATHODE 2 N/C 3 6 BASE 5 COLLECTOR 4 EMITTER Figure 1. Schematic 6 6 1 1 6 1 Figure 2. Package Outlines ©2007 Fairchild Semiconductor Corporation 4NXXM, H11B1M, TIL113M Rev. 1.0.4 .fairchildsemi. 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, TIL113M - 6-Pin DIP General Purpose Photodarlington Optocoupler Safety and Insulation Ratings As per DIN EN/IEC 60747-5-5, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data. pliance with the safety ratings shall be ensured by means of protective circuits. Parameter Installation Classifications per DIN VDE 0110/1.89 Table 1, For Rated Mains Voltage Climatic Classification Pollution Degree (DIN VDE 0110/1.89) parative Tracking Index < 150 VRMS < 300 VRMS Characteristics I- IV I- IV 55/100/21 2 Symbol Parameter...