Description
The 4N29M, 4N30M, 4N32M, 4N33M, H11B1M, and TIL113M have a gallium arsenide infrared emitter optically coupled to a silicon planar photodarlington.
Low Power Logic Circuits
Telecommunications Equipment
Portable Electronics
Solid State Relays
Interfacing Co
Features
- High Sensitivity to Low Input Drive Current.
- Meets or Exceeds All JEDEC Registered
Specifications.
- Safety and Regulatory Approvals:.
- UL1577, 4,170 VACRMS for 1 Minute.
- DIN-EN/IEC60747-5-5, 850 V Peak Working
Insulation Voltage.
H11B1M Datasheet
