Fairchild Semiconductor H11B815
The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package.| Part No. | H11B815 |
|---|---|
| Datasheet | H11B815 Download |
| Manufacturer |  Fairchild Semiconductor |
| Description | 4-PIN PHOTODARLINGTON OPTOCOUPLER |
| Buy | Stock & Price |
DESCRIPTION
FEATURES
●●
●
● Compact 4-pin package Current Transfer Ratio: 600% minimum (at IF = 1 mA) High isolation voltage between input and output (5300 VRMS) UL recognized (File # E90700)
APPLICATIONS
●●
●
●
● Power Supply Monitors Relay Contact Monitor Telephone/Telegraph Line Receiver Twisted Pair Line Receiver Digital Logic/Digital Logic © 2002 Fairchild Semiconductor Corporation Page 1 of 9 3/26/03 4-PIN PHOTODARLINGTON OPTOCOUPLER H11B815
ABSOLUTE MAXIMUM RATINGS
(No derating required up to 85°C) Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C EMITTER DC/Average Forward Input Current Reverse Input Voltage Forward Current - Peak (1µs pulse, 300pps) LED Power Dissipation @ TA = 25°C Derate above 25°C DETECTOR Collector-Emitter Voltage Emitter-Collector Voltage Continuous Collector Current Detector Power Dissipation @ TA = 25°C Derate above 25°C VCEO VECO IC PD 35 6 200 200 2.0 V V mA mW mW/°C I...
