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H11B815 - 4-PIN PHOTODARLINGTON OPTOCOUPLER

General Description

The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package.

Key Features

  • Compact 4-pin package Current Transfer Ratio: 600% minimum (at IF = 1 mA) High isolation voltage between input and output (5300 VRMS) UL recognized (File # E90700).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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4-PIN PHOTODARLINGTON OPTOCOUPLER H11B815 PACKAGE SCHEMATIC ANODE 1 4 COLLECTOR 4 4 CATHODE 2 3 EMITTER 1 1 4 1 DESCRIPTION The H11B815 consists of a gallium arsenide infrared emitting diode driving a silicon Darlington phototransistor in a 4-pin dual in-line package.