Fairchild Semiconductor H11D3
The H11DX and 4N38 are phototransistor-type optically coupled optoisolators. The device is supplied in a standard plastic six-pin dual-in-line package.DESCRIPTION
An infrared emitting diode manufactured from specially grown gallium arsenide is selectively coupled with a high voltage NPN silicon phototransistor. H11D1 H11D2 H11D3 H11D4 4N38FEATURES
● High Voltage - H11D1, H11D2, BVCER = 300 V - H11D3, H11D4, BVCER = 200 V● High isolation voltage - 5300 VAC RMS - 1 minute - 7500 VAC PEAK - 1 minute
● Underwriters Laboratory (UL) recognized File# E90700 ANODE 1 6 BASE
APPLICATIONS
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● Power supply regulators Digital logic inputs Microprocessor inputs Appliance sensor systems Industrial controls CATHODE 2 5 COLLECTOR N/C 3 4 EMITTER
ABSOLUTE MAXIMUM RATINGS
Parameter TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ TA = 25°C Derate above 25°C EMITTER *Forward DC Current *Reverse Input Voltage *Forward Current - Peak (1µs pulse, 300pps) *LED Power Dissipation @ TA = 25°C Derate above 25°C Symbol TSTG TOPR TSOL PD IF VR IF(pk) PD Value -55 to +150 -55 to +100 260 for 10...