H21A1 Datasheet | Fairchild Semiconductor

DESCRIPTION The H21A1, H21A2 and H21A3 consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light Ø 0.133 (3.4) Ø 0.126 (3.2) (2X) C L 0.39 (1.00) 0.34 (0.85) 0.755 (19.2) 0.745 (18.9) .073 (1.85) .133 (3.38) 0.129 (3.3) 0.119 (3.0) Optical C L rejection, cost and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output from an “ON” to an “OFF” state. 0.433 (11.0) 0.422 (10.7) SCHEMATIC 1 4 0.125 (3.2) 0.119 (3.0) C L .295 (7.5) .272 (6.9) 0.315 (8.0) FEATURES 0.110 (2.8) 0.091 (2.3) - Opaque housing - Low cost - .035” apertures - High IC(ON) 1. Derate power dissipation linearly 1.33 m W/°C above 25°C. 2. RMA flux is remended. 3. Methanol or isopropyl alcohols are remended as cleaning agents. 4. Soldering iron tip 1/16” (1.6mm) minimum from housing. 2 3 2 1 3 4 PIN 1 ANODE PIN 2 CATHODE PIN 3 COLLECTOR PIN 4 EMITTER 0.020 (0.51) (SQ) NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified. ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3 and 4) Soldering Temperature (Flow)(2 and 3) INPUT (EMITTER) Continuous Forward Current Reverse Voltage Power Dissipation (1) OUTPUT (SENSOR) Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation (TC = 25°C)(1) (TA = 25°C unless otherwise specified) Symbol TOPR TSTG TSOL-I TSOL-F IF VR PD VCEO VECO IC PD Rating -55 to +100 -55 to +100 240 for 5 sec 260 for 10 sec 50 6 100 30 4.5 20 150 Unit °C °C °C °C m A V m W V V m A m W  2001 Fairchild Semiconductor Corporation DS300290 5/02/01 1 OF 5 .fairchildsemi. H21A1 / H21A2 / H21A3 PHOTOTRANSISTOR OPTICAL INTERRUPTER SWITCH ELECTRICAL / OPTICAL...