Fairchild Semiconductor H21A3
The H21A1, H21A2 and H21A3 consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light Ø 0.133 (3.4) Ø 0.126 (3.2) (2X) C L 0.39 (1.00) 0.34 (0.85) 0.755 (19.2) 0.745 (18.9) .073 (1.85) .133 (3.38) 0.129 (3.3) 0.119 (3.0) Optical C L rejection, cost and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output from an “ON” to an “OFF” state.DESCRIPTION
0.433 (11.0) 0.422 (10.7) SCHEMATIC 1 4 0.125 (3.2) 0.119 (3.0) C L .295 (7.5) .272 (6.9) 0.315 (8.0)FEATURES
0.110 (2.8) 0.091 (2.3)● Opaque housing
● Low cost
● .035” apertures
● High IC(ON) 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron tip 1/16” (1.6mm) minimum from housing. 2 3 2 1 3 4 PIN 1 ANODE PIN 2 CATHODE PIN 3 COLLECTOR PIN 4 EMITTER 0.020 (0.51) (SQ) NOTES: 1. Dimensions for all drawings are in inches (mm). 2. Tolerance of ± .010 (.25) on all non-nominal dimensions unless otherwise specified.
ABSOLUTE MAXIMUM RATINGS
Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3 and 4) Soldering Temperature (Flow)(2 and 3) INPUT (EMITTER) Continuous Forward Current Reverse Voltage Power Dissipation (1) OUTPUT (SENSOR) Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation...