Fairchild Semiconductor H21B6
The H21B4, H21B5 and H21B6 consist of a gallium arsenide infrared emitting diode coupled with a silicon photodarlington in a plastic housing. The packaging system is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost and reliability. The gap in the housing provides a means of interrupting the signal with an opaque material, switching the output from an “ON” to an “OFF” state.DESCRIPTION
FEATURES
● Opaque housing● Low cost
● 035" apertures
● High IC(ON) © 2002 Fairchild Semiconductor Corporation Page 1 of 6 6/13/02 PHOTODARLINGTON OPTICAL INTERRUPTER SWITCH H21B4 H21B5 H21B6
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3 and 4) Soldering Temperature INPUT (EMITTER) Continuous Forward Current Reverse Voltage Power Dissipation(1) OUTPUT (SENSOR) Collector to Emitter Voltage Emitter to Collector Voltage Collector Current Power Dissipation (TC = 25°C)(1) VCEO VECO IC PD 55 6 40 150 V V mA mW IF VR PD 50 6 100 mA V mW (Flow)(2 and 3) Symbol TOPR TSTG TSOL-I TSOL-F Rating -55 to +100 -55 to +100 240 for 5 sec 260 for 10 sec Unit °C °C °C °C NOTES: 1. Derate power dissipation linearly 1.33 mW/°C above 25°C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm) minimum from housing. © 2002...