HG20N60B3 Datasheet | Fairchild Semiconductor

features of MOSFETs and bipolar transistors. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower onstate voltage drop varies only moderately between 25o C and 150o C. The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Formerly developmental type TA49050. Ordering Information PART NUMBER PACKAGE BRAND HGTG20N60B3 TO-247 NOTE: When ordering, use the entire part number. Symbol Features - 40A, 600V at TC = 25o C - 600V Switching SOA Capability - Typical Fall Time- - - - 140ns at 150o C - Short Circuit Rated - Low Conduction Loss - Related Literature - TB334 “Guidelines for Soldering Surface Mount ponents to PC Boards” Packaging JEDEC STYLE TO-247 COLLECTOR (FLANGE) FAIRCHILD CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754...